发明名称 METHOD FOR GROWING LI2B4O7 SINGLE CRYSTAL
摘要 PURPOSE:To enable the production of defectless single crystal in the production of Li2B4O7 single crystal by Czochralski process, by sampling the molten raw material, determining the composition by differential thermal analysis, and maintaining to the optimum composition. CONSTITUTION:A powdery raw material of Li2B4O7, or a mixture of Li2CO3 as the Li2O source and B2O3(H3BO3) as the B2O source is put into a platinum crucible, melted, and an Li2B4O7 single crystal is produced by the Czochralski proccess. In the above process, the molten raw material is sampled from the crucible, and its composition is determined quickly by differential thermal analysis. The deficient raw material is replenished according to the result of the analysis to keep the Li2O:B2O3 ratio in the molten raw material to 1:2. A high-quality Li2B4O7 single crystal 1 free from the defects such as bubbles, cracks, etc. can be produced in high reproducibility.
申请公布号 JPS605095(A) 申请公布日期 1985.01.11
申请号 JP19830109940 申请日期 1983.06.17
申请人 SUMITOMO DENKI KOGYO KK 发明人 TATSUMI MASAMI;TADA KOUJI
分类号 C30B15/00;C30B29/10;G02F1/03;G02F1/05;(IPC1-7):C30B15/00;C30B29/22 主分类号 C30B15/00
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