| 摘要 |
PURPOSE:To obtain the titled element which can perform high speed pulse modulation by reducing the junction capacitance parasitic in an electrode forming layer by a method wherein the electrode forming layer outside a current injected part is provided with current cut-off parts therein. CONSTITUTION:The element is composed of an active layer 2 epitaxially grown on a semiconductor substrate 1, a clad layer 3, the electrode forming layer 4 including the current injected part 41 and the current cut-off parts 42, an insulation film 5 including an electrode window 51, an N-side electrode 6 including a light lead-out window 6, and a P-side electrode 7. Therefore, this element act as a surface light eitting type light emitting diode which takes out light emission from the window 61 by the stricture and injection of current into the layer 2 from the injected part 41 during action thereof. Providing the cut-off parts 42 in the electrode forming layer outside the injected part 41 enables high peed pulse modulation of 200Mb/s or more by the reduction of the junction area between the layers 4 and 3 and of the parasitic capacitance. |
