| 摘要 |
PURPOSE:To manufacture the semiconductor device of excellent reliability by a method wherein the layer resistance of the firstr layer electrode is reduced to the fullest extent, a taper etching having suitable taper angle is performed, and the disconnection of wire on the second layer electrode is prevented. CONSTITUTION:A thermal oxide film is grown on a silicon substrate 1, and a field oxide film 2 is formed by performing a patterning. A gate oxide film 3 is grown on the element forming region of the silicon substrate 1 by performing heat treatment in a dry oxygen atmosphere, and a polycrystalline silicon 4 which will be turned to the first layer gate electrode is deposited on the whole surface of the gate oxide film 3. In addition, phosphorus is shallowly ion-implanted on the surface of the polycrystalline silicon layer 4, whereon a high density phosphorus was doped, and damage is given to the surface of the layer 4. After a resist pattern 5 has been formed, a taper etching is performed on the polycrystalline silicon layer 4 which will be turned to the first layer gate electrode. After the resist pattern has been peeled off, the exposed part of the gate oxide film 3 is exfoliated, and an interlayer insulation film 6 and the second layer gate oxide film 7 are formed. |
