| 摘要 |
PURPOSE:To prevent short-circuiting of the first Al wiring and the second Al wiring due to a crack in the interlayer insulating film by a method wherein on a lower wiring layer, a thin film of Si nitride is formed, on which an Si nitride film is formed through an Si oxide film and an upper wiring layer is formed by using said films as the interlayer insulating film. CONSTITUTION:After forming the first Al wiring 3, the first plasma CVD Si nitride film of 1,000Angstrom thick 4-1 is grown. Next, an SOG film 5 is formed by spin coating method, followed by heat treatment to remove a solvent existing in the film 5. At this time, as the first plasma CVD Si nitride film 4-1 is thin, impurities included in the first layer Al wiring 3 can come out penetrating through the film 4-1. Accordingly, a crack is not caused in the plasma CVD nitride film 4-1. After that, the second plasma CVD Si nitride film 4-2 is grown so as to isolate the first Al wiring 3 and the second Al wiring perfectly. |
