| 摘要 |
PURPOSE:To facilitate a formation of a photomask with a high accuracy by a method wherein a monitoring pattern is provided in each chip of an exposed part of a photomask, a wafer and the like in addition to a regular original pattern in order to check an accuracy of an electron beam equipment. CONSTITUTION:A monitoring pattern 10 is composed of patterns with which a scanning width W, an accuracy of a joint part of a stripe 4 and an accuracy of a beam are checked. An electron beam exposure of each stripe pattern 4 is performed in such a manner that the monitoring pattern 10 is exposed and scanned on one side and the original pattern is exposed and scanned and each chip of the whole surface of the photomask 1 is exposed along X-axis direction. Then the top pattern of the monitoring pattern 10 is drawn and the original pattern is exposed. The drawing of the monitoring pattern 10 and the exposure of the original pattern are repeated for every chip 2 and the exposure of the whole surface of the photomask 1 is completed. The accuracy of the joint part can be confirmed all over the photomask 1. The accuracy in the stripe 4 and a deflecting condition of an electron beam are also checked. |
