| 摘要 |
PURPOSE:To form an accurate metal pattern by a method wherein a metal film is formed on a semiconductor substrate with a step and a photoresist pattern is formed on an oxide film of this metal film and the metal oxide film and the metal film are removed by using the photoresist pattern as a mask and the remaining photoresist is removed. CONSTITUTION:After a whole surface is covered with an Al film 5, an alumina film 10 is formed and a photoresist film 6 is formed on it. When a light A is applied, as the alumina film 10 is porous and has a low reflection coefficient, the light is irregularly reflected or absorbed and is not reflected according to the slope of the Al film. Because the photoresist does not receive the light from the side during the exposure, a photoresist pattern 106a obtained by development afterwards reflects a mask pattern 7a and a pattern of an excellent shape is obtained. After that, the exposed alumina film 10 and the Al film 5 beneath the exposed alumina film 10 are removed by using the resist pattern as a mask. Because the resist pattern 106a adheres to the alumina film 10 well, the resist pattern is hardly peeled off and the required accurate Al pattern can be formed. |
