| 摘要 |
A process for the production of monocrystalline Hg1-xCdxTe wherein a molten mass of the desired composition x is cooled and solidified in a closed vessel and the solidified crystal is converted at temperatures below its melting point by high temperature recrystallization into the monocrystalline state, with an ampule of conical longitudinal cross-section being used as the closed vessel and the ampule being so held during the solidifying of the molten mass that the molten mass extends from the ample tip into the interior of the ampule. Undesired pressure is prevented from being exerted on the crystal by the ampule wall by the crystal only partially filling out the ampule interior and being conveyed into the ampule area of larger cross-section, and the recrystallization process is performed in a temperature zone with a longitudinal temperature gradient with the temperature decreasing in the direction of the larger ampule cross-section. |
