发明名称 HIGH FREQUENCY IMPEDANCE TRANSFORMER
摘要 PURPOSE:To increase the transformation ratio by connecting plural dielectric substrates provided with a circuit comprising a microstrip line, increasing the dielectric constant of the substrate higher at a low impedance terminal side and decreasing that lower toward a high impedance side. CONSTITUTION:A pattern 205 of a transformer of a distributed constant is formed on a high dielectric constant substrate 202 and a pattern 206 of transformer is formed on a low dielectric constant substrate 203. Further, the pattern 205 is connected to the low impedance terminal 201 and the pattern 206 is connected to the high impedance terminal 204. The dielectric constant of the substrate is formed highest at the low impedance terminal 201 and is lowered sequentially toward the high impedance terminal 204. Then a large transformation ratio is taken and the loss is decreased with a broad band.
申请公布号 JPS603202(A) 申请公布日期 1985.01.09
申请号 JP19830111254 申请日期 1983.06.20
申请人 MATSUSHITA DENKI SANGYO KK 发明人 MAKIMOTO MITSUO;MORI GIICHI;YAMASHITA SADAHIKO
分类号 H01P3/08;H01P5/02;(IPC1-7):H01P5/02 主分类号 H01P3/08
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