| 摘要 |
PURPOSE:To increase the dielectric resistance of a P-N junction by forming a polycrystalline Si layer containing a P type impurity while crossing the surface exposed section of the P-N junction and coating the whole surface containing the polycrystalline Si layer with an insulating film when a P type region is diffused and shaped to the surface layer section of an N type semiconductor substrate and a semiconductor device with the P-N junction is manufactured. CONSTITUTION:A P type region 2 is diffused and formed to the surface layer section of an N type Si substrate 1 and a P-N junction is shaped, a P type polycrystalline Si layer 5 of a predetermined shaped is formed on the substrate 1 while crossing the surface exposed section of the P-N junction, and the whole surface containing the polycrystalline Si layer is coated with an insulating film 3. Consequently, the surface of the substrate 1 under the layer 5 is changed into P type, a depletion layer from the region 2 is easy to expand to the section C and the dielectric strength of the junction is increased. Impurities from the outside are difficult to intrude to the substrate 1 by the presence of the layer 5, and the reliability of a device is improved. The area of an element is reduced because the size of the layer 5 may be small. |
