A process for making an ohmic contact to an N-type conductivity group III-V semiconductor compound and a semiconductor device having such an ohmic contact.

摘要

An ohmic contact is made to an n-type Group III-V semiconductor compound (eg gallium arsenide) by vapour depositing germanium (3) and a refractory metal (4) selected from the group consisting of molybdenum, tungsten and tantalum on to the substrate and sintering the substrate in a reducing atmosphere for a time and at a temperature sufficient to form the first-to-form germanide of the refractory metal. The resulting ohmic contact includes an interface region of germanium heavily doped with the Group V element disposed between a region of the Group III to V compound doped with germanium and the layer of germanide.