| 摘要 |
PURPOSE:To control easily the angle of a taper only by a change in the thickness of a photosensitive resin without changing etching conditions by taperingly etching a substrate by making use of the thermal deformation of the photosensitive resin as an etching mask. CONSTITUTION:A thermally oxidized film 12 is grown on a silicon single crystal substrate 11. The film 12 is coated with a photoresist 13, and a photoresist pattern 13' is formed in a conventional photolithographic stage. The film 12 is etched through the pattern 13' as a mask to form a pattern 12' having the same shape as the pattern 13'. The substrate 11 is then etched through the patterns 12', 13' as a mask. During the etching, the photoresist undergoes thermal deformation and flows toward the side wall of the etched part. The substrate 11 is taperingly grooved 14 by continuing the etching while covering the side wall of the etched part with the flowing photoresist. |
