发明名称 |
Mosfet fabrication method |
摘要 |
A method for fabricating a plurality of relatively closely spaced MOSFETs is disclosed. A field oxide (54) having a plurality of vertical-walled apertures (56) is formed on the surface (52) of a silicon substrate (50), and a monocrystalline semiconductor region (58) is grown epitaxially within each aperture. MOSFETs are then formed in these semiconductor regions. <IMAGE> |
申请公布号 |
GB2142185(A) |
申请公布日期 |
1985.01.09 |
申请号 |
GB19840014923 |
申请日期 |
1984.06.12 |
申请人 |
* RCA CORPORATION |
发明人 |
ALFRED CHARLES * IPRI;LUBOMIR LEON * JASTRZEBSKI |
分类号 |
H01L21/20;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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