| 摘要 |
<p>The present invention provides for the heat treatment of a solid object with electron beam energy Electrons are generated and propagated within a vacuum along a predetermined direction and in a linear beam that extends transverse to that direction. The beam is converged into a fine line of intense charge and impinged on a .region of the object being treated. The kinetic energy and the power density (flux) of the beam and the time for which the beam impinges on the object axe regulated to limit the depth of penetration of the object by the electrons and to provide a layer of the ob ect in the region being treated, which layer has a maximum depth of the order of microns, with a temperature that is high enough to effect heat treatment of the layer while thermal diffusion to the solid material underlying the layer is largely precluded. The present invention allows for annealing, welding, etching, curing, cutting, polishing and surface alteration of the solid object, and has been found particularly useful for melting a layer of semiconductor material having a small grain size for epitaxial recrystallization into a semiconductor having a large grain size</p> |
