| 摘要 |
PURPOSE:To enable to modulate of an amplifying gain coefficient to light emitting amount, light emitting wavelength and photowave at a high speed by varying the space distributions of electrons and holes in an actively layer by a voltage applied to a control electrode. CONSTITUTION:A semi-insulating GaAlAs clad layer 13, a GaAs active layer 11, a semi-insulating GaAlAs clad layer 12 are grown on a semi-insulating GaAs substrate 20 and a lower control electrode N type GaAs film 15. A P type GaAlAs clad region 16, an N type GaAlAs clad region 17 are formed, an aluminum film is formed as an upper control electrode 14, an AuCr alloy film is formed as a positive electrode 18, and an AuGaNi alloy film is formed as a negative electrode 19. When the voltages having reverse polarities and substantially equal magnitude are applied to the electrodes 14, 15 while applying a voltage to the electrodes 18, 19, electrodes and holes implanted to the layer 11 are isolated in the space. The switching time is determined by the time required for polarizing the electrode and holes or returning in the uniform distribution. |
