| 摘要 |
PURPOSE:To maintain the thickness distribution of the metallic crystal film deposited by evaporation on a surface for vapor deposition to a uniform thickness at all times with a vapor deposition device with an ion cluster beam by controlling freely the density of the electron current which ionizes the jet of a metallic cluster for vapor deposition. CONSTITUTION:A metal 2 for vapor deposition in a crucible 1 is heated in a high vacuum vessel and is released in the form of metallic vapor from the nozzle 3 of the crucible 1. Said vapor is rapidly adiabatially expanded to form a cluster-like jet 4 which collides against the surface for vapor deposition. The thermion released from the filament 5 of an electron gun 8 consisting of the filament 5, a grid 6 and an anode 9 is drawn out with the grid 6 and is accelerated by the anode 9 to irradiate said jet 4, thereby ionizing the jet. The electron flow 7 is deflected 13 adequately in a scanning space 12 by a deflecting and converging electrode 10 provided with an electric field control device 11 and is irradiated to the jet 4, by which the distribution of the ionized cluster is uniformly controlled and the film deposited by evaporation on the surface for vapor deposition is stably formed to a uniform thickness at all times. |
