MULTILAYER INTERCONNECTION STRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To enhance the reliability by deciding the thickness of an organic insulating film of the uppermost layer to the thickness of an inorganic insulating film of a lower layer to the specific range, thereby eliminating the disconnection of wirings and reducing the variation in the electric properties. CONSTITUTION:An interlayer insulating film of multilayer interconnection structure is composed of an inorganic insulating film of lower layer and an organic insulating film of polyimide resin of the uppermost layer in such a manner that the ratio of the thickness of the polyimide resin film/the thickness of the inorganic insulating film falls within 0.5-0.1. For instance, the second electrode wiring layer 6 formed of Al-2%Cu alloy is formed through an interlayer insulating film formed of a nitrided silicon film 4 accumulated by a plasma CVD method in a thickness of 1mum and a polyimide resin film 5 of 0.35mum thick coated on the film 4 on the first electrode wiring layer 3 formed of Al-1%Si-2%Cu alloy formed through an SiO2 insulating film 2 is formed on a semiconductor substrate 1 formed with an element.