发明名称 Unpowered fast gate turn-off FET
摘要 A fast turn-off MOSFET circuit is provided by a JFET in the gate circuit of the MOSFET which is connected to the same gate drive terminal as the MOSFET. The JFET becomes conductive upon turn-off of the MOSFET due to removal of gate drive. Conduction of the JFET provides faster discharge therethrough of residual stored charge on the MOSFET gate, whereby to facilitate faster MOSFET turn-off. A zener diode is connected in the gating circuitry and has a greater breakover voltage than the pinch-off voltage of the JFET, such that during turn-on, gate drive first pinches OFF the JFET and then charges up the MOSFET gate to drive the MOSFET into conduction.
申请公布号 US4492883(A) 申请公布日期 1985.01.08
申请号 US19820390720 申请日期 1982.06.21
申请人 EATON CORPORATION 发明人 JANUTKA, WILLIAM J.
分类号 H03K17/0412;H03K17/12;(IPC1-7):H03K17/04;H03K17/687 主分类号 H03K17/0412
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