发明名称 CLOSE CONTACT TYPE IMAGE SENSOR
摘要 PURPOSE:To enable to reproduce fresh image by forming to reduce the interelectrode distance of photoconductive element arrays from the center to the end, thereby maintaining the resistance value distribution of the photoconductive film over the entire portion substantially constant. CONSTITUTION:The distance L between the electrodes 13 is formed so that the distance Lc of the centers is considerably larger than the distance Le at the end part. The values of the distances Lc, Le and the variations of them are calculated by measuring the bright sheet resistance of the photoconductive film 12 and the deformation of the value of the W by experiments. The beat phenomenon of the bright resistance distribution due to side etching of the width of the electrode is cancelled, the conversion to binary value can be facilitated, and fresh image can be reproduced.
申请公布号 JPS601865(A) 申请公布日期 1985.01.08
申请号 JP19830108840 申请日期 1983.06.17
申请人 FUJITSU KK 发明人 SATOU MASUJI;TSUNASHIMA TAROU;MAEDA TOMIO;ABE TSUTSUMI
分类号 H04N1/028;H01L27/146;(IPC1-7):H01L27/14 主分类号 H04N1/028
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