| 摘要 |
Temperature variation of the input bias current of a monolithic integrated circuit junction field-effect transistor (JFET) is provided by a compensation diode formed concurrently with the JFET in the monolithic integrated circuit. The compensation diode has a first region which is formed concurrently with the channel region of the JFET, and a second region which is formed concurrently with the gate region of the JFET. The areas of the first region and the channel region are equal. In addition, the area of the junction formed by the first and second regions of the compensating diode is equal to the area of the junction formed by the gate and channel regions of the JFET. The first region of the compensation diode is electrically connected to the gate region of the JFET so that reverse leakage current of the compensation diode compensates and tends to cancel the reverse leakage current of the gate-channel junction of the JFET.
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