发明名称 |
Method of making photovoltaic device |
摘要 |
A method for making photovoltaic device comprising the steps of moving at least one substrate into a reaction chamber, causing a plasma reaction of raw material gases in said reaction chamber, thereby forming an amorphous silicon layer of a first conductivity type on said substrate, moving said at least one substrate into a next reaction chamber for a next plasma reaction, causing said next plasma reaction of next raw material gases in said reaction chamber, thereby forming a second amorphous silicon layer of a second conductivity type on said layer of the first conductivity type, the improvement being in after finishing said forming of said an amorphous silicon layer of a first conductivity type, changing the gas atmosphere of said reaction chamber into a different atmosphere which is substantially identical and of equal pressure to the next gas atmosphere of said next reaction chamber, and thereafter moving said substrate to said next reaction chamber.
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申请公布号 |
US4492605(A) |
申请公布日期 |
1985.01.08 |
申请号 |
US19830476707 |
申请日期 |
1983.03.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ISHIHARA, SHIN-ICHIRO;HIRAO, TAKASHI;MORI, KOSHIRO;MOCHIZUKI, MOTONORI |
分类号 |
H01L31/04;C23C16/54;H01L21/205;H01L31/20;(IPC1-7):C23C13/10;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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