发明名称 Method of making photovoltaic device
摘要 A method for making photovoltaic device comprising the steps of moving at least one substrate into a reaction chamber, causing a plasma reaction of raw material gases in said reaction chamber, thereby forming an amorphous silicon layer of a first conductivity type on said substrate, moving said at least one substrate into a next reaction chamber for a next plasma reaction, causing said next plasma reaction of next raw material gases in said reaction chamber, thereby forming a second amorphous silicon layer of a second conductivity type on said layer of the first conductivity type, the improvement being in after finishing said forming of said an amorphous silicon layer of a first conductivity type, changing the gas atmosphere of said reaction chamber into a different atmosphere which is substantially identical and of equal pressure to the next gas atmosphere of said next reaction chamber, and thereafter moving said substrate to said next reaction chamber.
申请公布号 US4492605(A) 申请公布日期 1985.01.08
申请号 US19830476707 申请日期 1983.03.18
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ISHIHARA, SHIN-ICHIRO;HIRAO, TAKASHI;MORI, KOSHIRO;MOCHIZUKI, MOTONORI
分类号 H01L31/04;C23C16/54;H01L21/205;H01L31/20;(IPC1-7):C23C13/10;H01L31/18 主分类号 H01L31/04
代理机构 代理人
主权项
地址