发明名称 Dry Etching method and device therefor
摘要 A dry etching method and device involve induction of a magnetic field having field lines perpendicular to an electric field by magnets which are arranged in the vicinity of a cathode within a reaction chamber, on the surface of the cathode being placed a sample to be etched by a plasma of an etchant gas.
申请公布号 US4492610(A) 申请公布日期 1985.01.08
申请号 US19830559857 申请日期 1983.12.12
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 OKANO, HARUO;HORIIKE, YASUHIRO
分类号 H01J37/34;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C23F1/02 主分类号 H01J37/34
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