| 摘要 |
<p>PURPOSE:To achieve the improvement in specific resistance and the improvement in adhesiveness between layers by forming a heating resistor with metal borides and conductive metal silicides. CONSTITUTION:The thin film heating resistor 2 on a substrate 1 composed of an electric insulator such as ceramics, glass or other is formed by adding metal borides such as zirconium boride, hafnium boride, titanium boride, lanthanum borides, etc. and conductive metal silicides such as MoSi2, WSi2, VSi2, NbSi2, etc. with the conductive metal silicides at 1 to 40 mol%, particularly 5 to 20 mol%. Thereby, the improvement in the adhesiveness of the substrate 1, electric conductor 3 such as aluminum or other and protecting layer 4 composed of silicon oxide, magnesium oxide or other and the thin film heating resistor 2 is achieved and the improvement in the specific resistance of the thin film heating resistor 2 is achieved through addition of the conductive metal silicides.</p> |
