| 摘要 |
PURPOSE:To improve the sensitivity to a short wavelength light by constituting the source, drain, gate, and channel regions of amorphous thin film material, when a static induction transistor is used as a photo transistor. CONSTITUTION:When the static induction transistor is used as the photo-transistor, the source, drain, gate, and channel regions are constituted of amorphous thin film material to device. That is, the device is composed by the successive lamination of a clear electrode 32, the drain region 33, and the channel region 34 on a transparent insulation substrate 31, and the gate regions 35 are formed in the channel region 34, light incidence being carried out from the substrate 31. |
