| 摘要 |
PURPOSE:To realize the non-symmetry of high concentration layers serving as the source and drain parts to the gate part by providing a side wall only on one side of the pattern of a gate electrode and then by ion implantation. CONSTITUTION:An operating layer 5 serving as the operating region is formed in a semiconductor substrate 4, and the electrode pattern 11 is formed thereon, the entire surface then being covered with an insulation film 18. The side wall 19 is left on one side of the pattern 11 by the anisotropic dry-etching of this insulation film 18 from an oblique direction, and the high concentration layers 6 and 7 non-symmetric with respect to the pattern 11 are provided by ion implantation with the pattern 11 and the side wall 19 as a mask. The manufacture of an MESFET of such a structure of non-symmetric gates wherein the drain part is distant from the gate by self-alignment enables to obtain the MESFET of a large mutual conductance gm and a large drain withstand voltage accurately and securely. |
