| 摘要 |
PURPOSE:To prevent the generation of a slip line by a method wherein the surface temperature of a wafer is made uniform, and a prescribed relation is maintained between the period wherein the temperature is maintained at 800 deg.C or above and the temperature. CONSTITUTION:When an ion-implanted semiconductor wafer is annealed by irradiating a beam of light coming from a lamp and the like for the purpose of obtaining an electric activation, a crystal damage recovery and the like, the temperature on the surface of a wafer is made uniform by changing the relection factor or the light emissivity of the wafer surface in the center part and the circumferential part of the semiconductor wafer, or by providing an auxiliary heater with which the wafer circumferential part will be heated up, or by changing the quantity of transmission radiation heat in the center part and the circumferential part with a filter arranged between the lamp and the wafer. Besides, the reaction between the (t) second of the period wherein the semiconductor wafer is maintained at 800 deg.C or above and the temperature T deg.C is set at integral Tdt<=1.1X10<4>. Then, when boron, phosphorus and arsenic are used as implantation ions, above-mentioned relation is prevribed at 0.1X10<4=integral Tdt<=1.1X 10<4>, 0.1X10<4=Tdt<=0.9X10<4> and 0<integral Tdt<=0.5X10<4>. |
