| 摘要 |
The first process is to form a P++ layer on a silicon substrate. The second process is to form an insulation layer in the back side of the silicon substrate. The third process is form an etch window by selectively etching the insulation layer. The fourth process is to connect the upper part of the silicon substrate to a MgO substrate. The fifth process is to thinly polish the MgO substrate. The sixth process is to form a lower electrode on the MgO substrate. The seventh process is to form a PbTiO3 ferro-electric material thin film on the lower electrode. The eighth process is to form an upper electrode on the PbTiO3 ferro-electric material thin film. The ninth process is to perform an isotropic etching the back side of the silicon substrate through the etch window so that an etch stop in the P++ layer. Thereby, it is possible to manufacture an infrared sensor having an excellent function.
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