| 摘要 |
PURPOSE:To obtain a preferable internal wiring of step coverage by selectively forming a conductive layer made of single or polycrystalline silicon in a hole to prevent a spike and to improve an aspect ratio. CONSTITUTION:A gate electrode 24 of a polycrystalline silicon is formed through a gate oxide film 23 on a substrate 21. Then, with the electrode 24 as a mask an N-type impurity is implanted to the substrate 21 to form shallow N<+> type source and drain regions 25, 26. Then, a silicone oxide film 27 on the regions 25, 26 is selectively removed to form holes (contacting holes) 281, 282, and with dichlorosilane and hydrochloric acid as main reaction gases conductive layers 291, 292 made of single crystal silicon are thickly formed selectively in the holes 281, 282 at approx. 950 deg.C. Thus, an aspect ratio can be improved, and to interpose the layers 281, 282 between the internal wiring 30 and the shallow regions 25 and 26, a spike is prevented to prevent a malfunction due to a shortcircuit between the wirings 30 and the substrate 21.
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