发明名称 |
PROCESS OF FORMING A POLYCRYSTALLINE SILICON PATTERN |
摘要 |
A process of forming a polycrystalline silicon pattern which is used for a semiconductor device, wherein the degree of side etching is low and the obtained pattern is of high precision. Firstly, a polycrystalline silicon layer is deposited on a semiconductor substrate or on an insulating film which is formed on a semiconductor substrate. An impurity is selectively ion-implanted with high concentration into the region in the layer which is to remain as a polycrystalline silicon pattern. Finally, whole of the polycrystalline silicon layer into which the impurity is thus selectively ion-implanted is plasma-etched to etch off the areas into which the impurity is not ion-implanted. |
申请公布号 |
DE3167348(D1) |
申请公布日期 |
1985.01.03 |
申请号 |
DE19813167348 |
申请日期 |
1981.12.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOMATSU, SHIGERU;KAMIYA, MICHIO |
分类号 |
H01L21/3213;H01L21/3215;(IPC1-7):H01L21/28;H01L21/30;H01L21/26 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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