发明名称 |
FABRICATION OF SEMICONDUCTOR DEVICE |
摘要 |
A process for manufacturing a high voltage DMOS (Deep Diffusion Metal Oxide Semiconductor) transistor includes a first ion implantation and drive-in step to form a P-well in a N-substrate, and a second such step to form a N+ region in this well and a channel between this region and the substrate and under a polysilicon gate which is covered with a silicon nitride layer during the first step. By the presence of the latter layer pitting of the gate is prevented and no leakage paths are formed between source and drain. |
申请公布号 |
AU2982884(A) |
申请公布日期 |
1985.01.03 |
申请号 |
AU19840029828 |
申请日期 |
1984.06.25 |
申请人 |
INTERNATIONAL STANDARD ELECTRIC CORP. |
发明人 |
GUSTAAF SCHOLS |
分类号 |
H01L27/088;H01L21/033;H01L21/225;H01L21/318;H01L21/336;H01L21/8234;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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