发明名称 Logic and amplifier cells.
摘要 <p>Disclosed is a high-speed circuit in which a basic cell includes a high-speed first transistor (Q1) and a high-speed second transistor (Q2). Both the first and second transistors have high gain-bandwidth products. The second transistor (Q2) is a unipolar (field-effect) device which is connected in a cascode configuration with the first transistor (Q1). The unipolar device functions to control the operating point of the first transistor over a range from "on" to "off" as a function of the unipolar device operating at a point over the range from "on" to "off". The unipolar device is controlled by an input voltage signal applied to its gate.</p>
申请公布号 EP0130082(A2) 申请公布日期 1985.01.02
申请号 EP19840304324 申请日期 1984.06.26
申请人 SABER TECHNOLOGY CORPORATION 发明人 VALDEZ, FRANK ALEXANDER
分类号 H03F1/02;H03F1/22;H03K17/04;H03K17/567;H03K17/60;H03K17/687;H03K19/0944;H04N5/14;(IPC1-7):H03K19/094;H03F3/193 主分类号 H03F1/02
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