发明名称 |
Logic and amplifier cells. |
摘要 |
<p>Disclosed is a high-speed circuit in which a basic cell includes a high-speed first transistor (Q1) and a high-speed second transistor (Q2). Both the first and second transistors have high gain-bandwidth products. The second transistor (Q2) is a unipolar (field-effect) device which is connected in a cascode configuration with the first transistor (Q1). The unipolar device functions to control the operating point of the first transistor over a range from "on" to "off" as a function of the unipolar device operating at a point over the range from "on" to "off". The unipolar device is controlled by an input voltage signal applied to its gate.</p> |
申请公布号 |
EP0130082(A2) |
申请公布日期 |
1985.01.02 |
申请号 |
EP19840304324 |
申请日期 |
1984.06.26 |
申请人 |
SABER TECHNOLOGY CORPORATION |
发明人 |
VALDEZ, FRANK ALEXANDER |
分类号 |
H03F1/02;H03F1/22;H03K17/04;H03K17/567;H03K17/60;H03K17/687;H03K19/0944;H04N5/14;(IPC1-7):H03K19/094;H03F3/193 |
主分类号 |
H03F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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