| 摘要 |
A semiconductor non-volatile memory device comprising: (a) memory transistor which has: a first source, drain, and channel regions; a first insulation film formed above the first channel region; a floating gate formed above the first insulation film; and a first impurity region which is formed contiguous with the first drain region adjacent to an end of the floating gate, and which has a conductivity type opposite to that of the first drain region; (b) a switching transistor which has: second source, drain, and channel regions, a second insulation film formed above the second channel region, and a gate electrode formed above the second insulation film; (c) wiring means which connects the first impurity region of the memory transistor to the second drain region of the switching transistor. When information is being written, the switching transistor keeps the first impurity region in a ground state, and when information is being read, the switching transistor keeps the impurity region in an electrically floating state.
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