| 摘要 |
<p>Polyimide compsns. and polyamide-acid compsns. readily convertible to them contg. residues (1) min. 20 mol.% residues of formula (I) and/or (II) and (2) min. 50 mol.% residues of formula (III) and/or (IV). A = an aromatic diether anhydride (or precursor) residue of formula (V). Y = an aromatic diether diamine residue of formula (VI). K = C6H4-W-C6H4 and G = C6H4-E-C6H4; W, E = independently a direct bond, O, S, SO2, 1-8C alk(en)yl or C(R1)(R2), provided when either is a direct bond or S, the other is not a direct bond; R1, R2 = independently low alk(en)yl or (substd.) 6-24C aryl. Also claimed is a method for protecting a semiconductor device by applying the above compsns., opening holes in the formed layer, attaching wires to the semiconductor via the holes and heating to allow the compsn. to flow into the holes and surround the wires.</p> |
