| 摘要 |
A self-substrate-bias circuit device comprising substrate of P conductivity type, a capacitor element of MOS construction formed in said semiconductor substrate and whose one end is connected to the output terminal of a pulse generator, a diode element formed in said semiconductor substrate and connected between the other end of said capacitor element and a ground potential, and an P+ region of P conductivity type formed in the region of said seminconductor substrate which is contacted to said capacitor element and having higher impurity concentration than that of said semiconductor substrate.
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