发明名称 |
Method for manufacturing a semiconductor device |
摘要 |
A method is proposed for manufacturing a semiconductor device, which comprises forming groove(s) having a vertical wall in a semiconductor substrate; doping the same type of impurity as that of the substrate at a dose of not less than 1x1014 cm-2 or the opposite type of impurity to that of the substrate in said groove(s) to form an impurity region; filling the groove(s) with an insulating material to form a field region. A semiconductor device having an impurity region of the same conductivity type as that of the semiconductor substrate under a buried field region and of a sheet resistance rho s=50 ohms/ &squ& is also proposed.
|
申请公布号 |
US4491486(A) |
申请公布日期 |
1985.01.01 |
申请号 |
US19820418802 |
申请日期 |
1982.09.16 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
IWAI, HIROSHI |
分类号 |
H01L21/74;H01L21/762;H01L29/06;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/74 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|