| 摘要 |
The invention relates to semiconductor technology. A thin layer transistor is formed by connecting in series on a substrate a set of thin layer transistors 1, 2, ..., N. The gate electrodes of all the elementary transistors are joined together to form a single common gate electrode G and the two ends of the string of series-connected elementary transistors define the source electrode S and the drain electrode D respectively of the overall transistor. Elementary transistor shapes are chosen such that a permutation of the source and drain produces no variation in current in the non-conducting state. Application to display panels with a matrix of active elements. <IMAGE>
|
