| 摘要 |
PURPOSE:To enable to reduce the rate of strain by cancelling the variation of resistance values with the variation of voltages by a method wherein a resistor is constructed by the series or parallel connection of resistor regions of a small resistance, and the middle point of each resistor region is connected to an epitaxial region. CONSTITUTION:The N type epitaxial region formed in a P type semiconductor substrate 20 is divided and separated into a plurality of subdivisions of epitaxial regions 24, 26, and 28 by means of an isolation region 22. P type resistor regions 30, 32, and 34 are individually formed in each of these adjacent epitaxial layers 24, 26, and 28. An electrode 36 is formed at the end of each resistor region 30, 32, and 34, and a middle point electrode section 38 is formed at the middle point of each resistor region 30, 32, and 34. Each resistor region 30, 32, and 34 is connected in series by means of wiring conductors 40a and 40b of Al wiring, etc. via electrode 36, thus constructing a series resistor, and electrically connecting an electrode 42 formed in each epitaxial region 24, 26, and 28 by means of wiring conductors 44a, 44b, and 44c.
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