| 摘要 |
PURPOSE:To easily enable to realize an M-bit class memory by enlarging the memory capacitance to a greater extent with respect to a constant region by a method wherein a groove-formed recess is provided along the peripheral region of the memory section by the process of fine etching based on self-alignment, and a memory region is formed in this recess. CONSTITUTION:An Si mask M having a comb-formed aperture is arranged on a P type Si substrate 1, and the substrate 1 is processed with this Si mask, resulting in the formation of a fine etching width along on the processed line on the basis of self-alignment. This region is made as the groove-formed deep recess 11, thus being assingned as the memory region. Further processing the substrate 1 to an arbitrary shape such as a comb form enebles to increase its perimeter, and the memory region is therefore increased by the increment. Besides, an MOSFET is formed in a region isolated by the Si3N4 layer 14 in said memory capacitance region, and the gate poly Si layer 7 thereof is wired in the form of passage across a part of said memory region. |
