SEMICONDUCTOR IMAGE PICKUP DEVICE

摘要

PURPOSE:To decrease long-wavelength side sensitivity by forming an insulating layer at the lower side in a high-resistance semiconductor area right under a control gate area. CONSTITUTION:Another insulating layer 90 is further formed in the high-resistance n<-> layer 2 right under the control gate 4. When a drain 3 is 0.1-0.2mum deep and the gap between the gate 4 and a shielding gate 5 is 3mum, the high- resistance n<-> layer 2 should be about 6mum thick so that the voltage amplification factor is ''4''. The insulating layer 90 is formed in the high-resistance n<-> layer 2 right under the gate 4 so as to cut the long-wavelength side sensitivity without decreasing the voltage amplification factor not distributing a current flow between the source and drain. Then, the gap l5 between the gate 4 and insulating layer 90 is adjusted to cut the long-wavelength sensitivity to desired wavelength.