| 摘要 |
PURPOSE:To obtain the tutled element of stable characteristics by heating only the interface in a short time without heating and deteriorating the other part, by irradiation the interface between an amorphous hydrogenated Si layer and the second photo transmitting electrode with a laser beam, after the first electrode, the Si layer, and the second electrode are successively formed on a substrate. CONSTITUTION:A Cr film is deposited on the glass substrate 1 by electron beam vapor deposition method. Next, the Cr film at the unnecessary part is removed by etching, thus forming rectangular electrodes 2 split in such a manner that the density of arrangement becomes 8pcs/mm.. Further, after the surface of the substrate 1 is washed, an amorphous hydrogenated Si layer is deposited via metal mask of a fixed shape by glow discharge decomposing method with monosilane SiH4. Besides, with Ind-Sn oxide as a target, an ITO electrode 4 is film-deposited via metal mask by DC magnetron sputtering method in the atomosphere of oxygen O2+ argon Ar. The interface between the amorphous Si layer and the transparent electrode is heat-treated by irradiating the element thus constructed with an Ar<+> laser light of the oscillation wavelength of 5,145Angstrom in the air.
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