| 摘要 |
PURPOSE:To obtain devices of structure wherein two different wavelengths can be obtained normally by the same manufacturing method by forming each layer including an active layer on a substrate wherein stepwise differences and two parallel ridges are formed, and forming current injected regions immediately above the bent part of the active layer and above the groove part between the ridges. CONSTITUTION:The stepwise differences and the two parallel ridges are formed on the plane 100 of an N type GaAs substrate 1 in the direction of <011> at an interval. The first layer N type Ga0.57Al0.43As clad layer 2, second layer non- doped Ga1-yAlyAs active layer 3, third layer P type Ga0.57Al0.43As clad layer 4, and forth layer N type GaAs current restraining layer 5 are successively grown on this substrate. Next, a P type impurity is selectively diffused in stripe form from the grown surface to immediately above the bent part of the active layer and above the groove between the ridges, so that the diffusion front reaches the clad layer 4. Thereafter, an insulation film 10 on the wall of the groove, a P- side ohmic electrode 6, and an N-side ohmic electrode 7 are successively formed after the removal of a diffusion preventing film 9, the semiconductor wafer manufactured is cleft and then mounted on an Si block, resulting in completion.
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