| 摘要 |
PURPOSE:To improve bonding strength by forming a through hole to the position located to the bonding pad in the side of second bond of inter-layer insulating film and by forming the bonding pad by stacking the lower layer electrode and upper layer electrode. CONSTITUTION:In the case of wire bonding between an IC chip 4 and upper layer electrode 2, a through hole is bored at the area 6 located to bonding pad 5 in the side of second bond of inter-layer insulating film 1 and the electrode 8 is simultaneously formed to such area when the lower layer electrode 7 is formed. Moreover, the bonding pad 5 is formed by direct stacking of the electrode 8 and upper layer electrode 2 by forming the upper layer electrode 2. In this case, for example, the lower layer electrode 7 is wired like a meander avoiding the bonding pad 5. |
