| 摘要 |
PURPOSE:To improve the temperature characteristic of dark current and the SN ratio by interposing an insulation layer between a clear electrode and a photoconductor layer as the blocking layer to block the injection of charges from the electrode and the transfer of charges thermally excited in the photoconductor layer. CONSTITUTION:After a Cr thin film is attached on an insulation ceramic substrate 1 by electron beam vapor depositing method, the pattern of a Cr electrode 2 is formed to a fixed shape by photolithography. Next, an amorphous hydrogenated Si film 3 is attached by plasma chemical vapor depositing method. Thereafter, an Si oxide layer 4 is attached in film as the blocking layer by sputtering method. Successively, Ind-Sn oxide 5 is deposited in film by sputtering method, thereby forming the title element. |
