| 摘要 |
PURPOSE:To obtain a self-alignment type MESFET of high performance by a method wherein, after the formation of the source and drain regions, a self-alignment structure is obtained by the method for transferring the shape of an insulation film pattern used as a mask for impurity ion implantation into the shape of a gate electrode. CONSTITUTION:An insulation film 23 relatively thick is deposited on a compound semiconductor substrate, and the metallic pattern 25 is formed thereon in the region for gate electrode formation. The insulation film is etched by anisotropic etching method. Thereafter, the resist pattern 26 having an aperture is formed in the element region, and an impurity is ion-implanted at a high concentration, thus forming the source and drain regions 27. Afterwards, the side surface of the insulation film is slightly etched by isotropic etching method. After the removal of the metallic pattern and then annealing, and organic film 28 is applied over the entire surface, resulting in flattening the surface. The surface of the insulation film 23 is exposed, and next the substrate surface is exposed by the removal of this insulation film by etching. A metallic film for the gate electrode is adhered over the entire surface and processed by lift-off with the organic film, and accordingly the gate electrode 29 formed.
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