| 摘要 |
A method for fabricating a plurality of relatively closely spaced MOSFETs is disclosed. A field oxide (54) having a plurality of vertical-walled apertures (56) is formed on the surface (52) of a silicon substrate (50), and a monocrystalline semiconductor region (58) is grown epitaxially within each aperture. MOSFETs are then formed in these semiconductor regions. <IMAGE> |
