| 摘要 |
PURPOSE:To enable to write at a high speed in an FAMOS memory or an SAMOS memory by applying a disorder to the crystal structure of a silicon single near a drain. CONSTITUTION:The entire wafer of an FAMOS 1 is covered with a resist R except a hole Ra, and ions are implanted through the hole Ra to Si single crystal X near a drain D. Thus, a disorder in a periodicity is applied to the crystal structure of Si single crystal X. As a result, even if the voltage applied to the drain D is low, an avalanche breakdown effectively occurs near the drain D, and many electrons are implanted to a floating gate Gf. Thus, a writing voltage is reduced to write at a high speed. Similar effect can be obtained, for example, even by other method such as an electron beam or laser emission. This can also be applied to an SAMOS memory.
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