| 摘要 |
PURPOSE:To manufacture a semiconductor device with excellent element characteristics by a method wherein the surface side of a semiconductor film is made amorphous by an ion implantation and then recrystallized by a heat-treatment. CONSTITUTION:A single-crystal Si vapor phase deposition film 2 is formed on a sapphire alpha-Al2O3 single crystal substrate 1 by a CVD method. The surface of the film 2 is heated by a scanning of an argon concecutive oscillation type laser beam above the film 2. Then Si ions are implanted with a prescribed acceleration energy into the film 2 to form an amorphous layer 3 in the film 2 on the side of a boundary between Si and sapphire. Then the substrate is subjected to a heat-treatment at 700 deg.C for 60min in an N2 atmosphere and a recrystallized layer 4 is formed by an epitaxial growth of the layer 3 from the surface side. Then Si ions are implanted with a prescribed acceleration energy into the surface side of the film 2 to make the film 2 to form an amorphous film 5 on the surface side. The substrate is subjected to a heat-treatment at 700 deg.C for 60min in an N2 atmosphere to form a recrystallized layer 6. After that, an MOS transistor is formed in the single crystal Si film on the substrate 1. |
