| 摘要 |
PURPOSE:To avoid a distortion of a mask by a method wherein GaAs is made to grow on an epitaxial layer of AlGaAs or AlAs and an exposed GaAs substrate by an epitaxial growth method and a step between a polcrystalline part and a single-crystal part is eliminated. CONSTITUTION:An AlGaAs epitaxial layer 2 is formed on a semi-insulating GaAs substrate 1 by an MBE method. A resist layer 3 is selectively formed on the layer 2 and, after the exposed part of the layer 2 is removed by etching, the resist layer 3 is removed by a solvent and a prescribed pattern of the layer 2 remains on the substrate 1. Then a GaAs layer 4 is made grow on the film 2 and the surface of the substrate 1. Because polycrystalline GaAs is made grow on the film 2 and single-crystal GaAs is made grow on the exposed surface of the substrate 1, the film 4 is composed of the polycrystalline part 4A and the single-crystal part 4B and almost no step exists on a boundary between the polycrystalline part and the single-crystal part.
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