| 摘要 |
PURPOSE:To obtain a substrate for mounting an element having similar thermal expansion coefficient to a semiconductor element and preferable thermal conductivity by immersing 5-30wt% of Cu in powder sintered porous material of the prescribed inorganic substance. CONSTITUTION:An inorganic substance is selected from BN, SiC, Si3N4 or BeO, and 5-30wt% of Cu is immersed in the sintered powder 1. At this time, a skeleton of the inorganic substance is continued, immersed Cu is continued, the thermal expansion of the produced composite material depends upon the inorganic substance, thermal conduction depends upon the Cu, and a substrate adapted for mounting a semiconductor element is obtained. Even if a semiconductor element of large size is mounted on the substrate of this composition, the element is not cracked exfoliated, and the generated heat can be rapidly dispersed.
|
