| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method, which is capable of forming insulating film having rigid coupling and comprising a CF (fluorine added carbon) film, having high thermal stability, e.g. the interlayer insulating film of semiconductor devices. SOLUTION: A compound gas of C(carbon) and F(fluorine), e.g. C4 F8 and a hydrogen carbide gas, e.g. C2 H4 gas are used as film-forming gas. These gases are made into plasma, and a CF film is formed on a semiconductor wafer 10 by active species. Then Ar gas is introduced as a sputtering gas and made into plasma. The CF film formed on the wafer 10 is sputtered by Ar plasma. When film processing and sputtering are performed repeated alternately, the weak coupling present in the CF film is discharged by the sputtering, so that the coupling becomes rigid, the coupling becomes hard to be broken under high temperature, and the thermal stability is improved.</p> |
