| 摘要 |
PURPOSE:To form a fluorinated silicon thin film on a substrate in high productivity, by the glow-discharge decomposition of a gaseous mixture composed mainly of a higher fluorinated silane and containing monosilane or hydrogen. CONSTITUTION:A substrate such as silicon single crystal wafer, glass, stainless steel, ceramic, etc. is placed in a reaction chamber having a glow-discharging means. A gaseous mixture composed of a higher fluorinated silane of formula SinF2n+2 (n is integer of >=2), especially hexafluorodisilane of formula Si2F6 (n=2) mixed with SiH4 and H2 is introduced into the reaction chamber, and glow discharge is generated in the chamber to deposit a thin film of fluorinated silicon on the substrate in high productivity.
|
